MEASUREMENTS AND CONTROL OF PARTICLE DEPOSITION VELOCITY ON A HORIZONTAL WAFER WITH THERMOPHORETIC EFFECT

Citation
Gn. Bae et al., MEASUREMENTS AND CONTROL OF PARTICLE DEPOSITION VELOCITY ON A HORIZONTAL WAFER WITH THERMOPHORETIC EFFECT, Aerosol science and technology, 23(3), 1995, pp. 321-330
Citations number
17
Categorie Soggetti
Engineering, Mechanical","Environmental Sciences
ISSN journal
02786826
Volume
23
Issue
3
Year of publication
1995
Pages
321 - 330
Database
ISI
SICI code
0278-6826(1995)23:3<321:MACOPD>2.0.ZU;2-C
Abstract
To investigate positive and negative thermophoretic effects for polyst yrene latex (PSL) spheres of diameter between 0.3 and 0.8 mu m, the av erage deposition velocity toward a horizontal wafer surface in vertica l airflow is measured keeping the wafer surface temperature different from the surrounding air temperature. The temperature difference range s from -10 degrees to 4 degrees C. The number of particles deposited o n a wafer surface is obtained from the measurements by using a wafer s urface scanner (PMS SAS-3600). Experimental data of particle depositio n velocity are compared with those given by the prediction model to va lidate the model. Since thermophoresis changes greatly the particle de position velocity, temperature difference necessary for the particle d eposition velocity to remain under a given value is sought as a means to control the deposition velocity. The minimum temperature difference s required to keep the average deposition velocity smaller than 10(-4) cm/s and 10(-5) cm/s in a clean room environment are suggested based both on the prediction model and the present experimental data.