A THEORETICAL-MODEL FOR H-2 DISSOCIATIVE ADSORPTION ON CU SURFACES

Citation
Jj. Xie et al., A THEORETICAL-MODEL FOR H-2 DISSOCIATIVE ADSORPTION ON CU SURFACES, Acta physica Sinica, 4(9), 1995, pp. 691-697
Citations number
NO
Categorie Soggetti
Physics
Journal title
ISSN journal
10003290
Volume
4
Issue
9
Year of publication
1995
Pages
691 - 697
Database
ISI
SICI code
1000-3290(1995)4:9<691:ATFHDA>2.0.ZU;2-L
Abstract
A theoretical model for describing H-2 dissociative chemisorption on C u surfaces is proposed. The sticking probability S is calculated as a function of vibrational state, average kinetic energy and incident ang le of hydrogen molecular beam. Within the theoretical frame of this mo del, the different contributions to S from H-2(upsilon = 0) and H-2(up silon = 1) can be clearly distinguished. The calculated results indica te that vibrational energy significantly promotes the chemisorption of H-2 on Cu surfaces in the region of low translational energy. The equ ations derived can be used to analyze the experimental data for both p ure and seeded molecular beams.