SRRUO3 THIN-FILMS GROWN UNDER REDUCED OXYGEN-PRESSURE

SrRuO3 thin films are grown under reduced oxygen pressures between 10( -6) Torr and 100 mTorr by pulsed laser deposition. The thin films grow n at temperatures above 640 degrees C and at a pressure of 10(-6) Ton are characterized in terms of the lattice shrinkage due to oxygen defi ciency. The resistivity increases and the temperature dependence chang es to semiconductive from metallic as the oxygen pressure during growt h is decreased. The Hall coefficient of the film grown at 740 degrees C and at a pressure of 10(-6) Torr is thirty times higher at low tempe ratures than at room temperature. The transport properties of the film are thought to result from the high carrier concentration but the low mobility due to the oxygen deficiency.