RECRYSTALLIZATION OF ARSENIC IMPLANTED LAYER IN SILICON BY VACUUM-ULTRAVIOLET-LIGHT IRRADIATION

Authors
SAITO Y IMAI H SUGITA Y ITO T
Citation
Y. Saito et al., RECRYSTALLIZATION OF ARSENIC IMPLANTED LAYER IN SILICON BY VACUUM-ULTRAVIOLET-LIGHT IRRADIATION, JPN J A P 1, 35(12A), 1996, pp. 6239-6240
Citations number
5
Categorie Soggetti
Physics, Applied
Journal title
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS → ACNP
Volume
35
Issue
12A
Year of publication
1996
Pages
6239 - 6240
Database
ISI
SICI code
Abstract
Re-crystallization of implanted layers and electrical activation of im planted As atoms by vacuum-ultraviolet (VUV) light irradiation in sili con substrates below 470 degrees C were investigated by means of sheet resistance measurements and reflection high-energy electron diffracti on (RHEED). The reduction in the process temperature by irradiation of VUV light onto the implanted layer at 1 Wcm(-2) is estimated to be ab out 50 degrees.