ION-BEAM MIXING OF FE THIN-FILM AND SI SUBSTRATE

Authors
SANTOS DL DESOUZA JP AMARAL L BOUDINOV H
Citation
Dl. Santos et al., ION-BEAM MIXING OF FE THIN-FILM AND SI SUBSTRATE, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 103(1), 1995, pp. 56-59
Citations number
20
Categorie Soggetti
Physics, Nuclear","Nuclear Sciences & Tecnology","Instument & Instrumentation
Journal title
Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms → ACNP
ISSN journal
0168583X
Volume
103
Issue
1
Year of publication
1995
Pages
56 - 59
Database
ISI
SICI code
0168-583X(1995)103:1<56:IMOFTA>2.0.ZU;2-X
Abstract
Samples consisting of thin Fe film (40 nm) deposited on (100)Si substr ate were irradiated at different temperatures with a Xe+ beam (0.2-2.0 x10(16)cm(-2) at 380 keV) and analysed by Rutherford backscattering sp ectrometry (RES) and conversion electron Mossbauer spectrometry (CEMS) . The intermixing was found to be controlled by cascade mixing when pe rformed at temperatures below similar or equal to 160 degrees C and by radiation enhanced diffusion (RED) at higher temperatures. A combinat ion of Fe3Si,FeSi and beta-FeSi2 phases composes the intermixed layer, being the latter phase the predominant compound product, for T less t han or equal to 300 degrees C. When Xe+ irradiation is conducted at 40 0 degrees C the alpha-FeSi2 phase is additionally formed, In this case the most abundant phases are Fe3Si and FeSi.