GREEN LASER-DIODES WITH CHANNELED-SUBSTRATE PLANAR WAVE-GUIDE STRUCTURE

The first II-VI index guided inner stripe laser diodes grown by one-st ep molecular beam epitaxy (MBE) on a structured GaAs substrate have be en fabricated. The laser, operating at a wavelength of 512 nm, consist s of a ZnCdSe/ZnSSe/ZnMgSSe single quantum-well (SQW) separate-confine ment heterostructure (SCH) grown on a 6 mu m wide channelled substrate containing a p-GaAs current blocking layer on (100) n-GaAs. The thres hold current density was as low as 350 A/cm(2) for the 1 mm long as-cl eaved device under room temperature pulsed conditions.