IN0.53GA0.47AS ALAS RESONANT-TUNNELING DIODES WITH SWITCHING TIME OF 1.5PS/

Authors
SHIMIZU N NAGATSUMA T WAHO T SHINAGAWA M YAITA M YAMAMOTO M
Citation
N. Shimizu et al., IN0.53GA0.47AS ALAS RESONANT-TUNNELING DIODES WITH SWITCHING TIME OF 1.5PS/, Electronics Letters, 31(19), 1995, pp. 1695-1697
Citations number
5
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
31
Issue
19
Year of publication
1995
Pages
1695 - 1697
Database
ISI
SICI code
0013-5194(1995)31:19<1695:IARDWS>2.0.ZU;2-F
Abstract
Switching times of 1.5ps for In0.53Ga0.47As/AlAs resonant tunnelling d iodes (RTDs) with 1.1 nm wide barriers and a peak current density of 6 .8 x 10(5) A/cm(2) are reported. To the authors' knowledge, this is th e fastest switching ever reported for any type of RTD. The authors con firm that the obtained switching time is close to the value calculated from the experimentally derived depletion-layer capacitance and avera ge negative differential resistance.