ELECTROPHOTOGRAPHIC PATTERNING OF THIN-FILM SILICON ON GLASS FOIL

We report the patterning of thin films of amorphous silicon (a-Si:H) u sing electrophotographically applied toner as the etch mask, Using a c onventional xerographic copier, a toner pattern was applied to 0.1 mu m thick a-Si : H films deposited on similar to 50 mu m thick glass foi l. The toner then served as the etch mask for a-Si : H, and as the lif t-off material for the patterning of chromium, This technique opens th e prospect of roll-to-roll, high-throughput patterning of large-area t hin-film circuits on glass substrates.