ENHANCED OFF-STATE LEAKAGE CURRENTS IN N-CHANNEL MOSFETS WITH N2O-GROWN GATE DIELECTRIC

Authors
XU Z LAI PT NG WT
Citation
Z. Xu et al., ENHANCED OFF-STATE LEAKAGE CURRENTS IN N-CHANNEL MOSFETS WITH N2O-GROWN GATE DIELECTRIC, IEEE electron device letters, 16(10), 1995, pp. 436-438
Citations number
12
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
IEEE electron device letters → ACNP
ISSN journal
07413106
Volume
16
Issue
10
Year of publication
1995
Pages
436 - 438
Database
ISI
SICI code
0741-3106(1995)16:10<436:EOLCIN>2.0.ZU;2-2
Abstract
This paper reports on the off-state drain (GIDL) and gate current (I-g ) characteristics of n-channel MOSFET's using thin thermal oxide (OX), N2O-nitrided oxide (N2ON), and N2O-grown oxide (n2OG) as gate dielect rics. Important phenomena observed in N2OG devices are enhanced GIDL a nd I-g in the low-field region as compared to the OX and N2ON devices. They are attributed to heavy-nitridation-induced junction leakage and shallow-electron-trap-assisted tunneling mechanisms, respectively. Th erefore, N2ON oxide is superior to N2OG oxide in leakage-sensitive app lications.