NONLOCAL EFFECTS IN P-MOSFET SUBSTRATE HOT-HOLE INJECTION EXPERIMENTS

Extensive measurements of hot-hole injection probability from silicon into silicon dioxide covering a wide range of oxide fields and substra te biases are presented and compared with results previously published in the literature. It is found that, in the highly inhomogeneous elec tric fields typically needed to induce substrate hole injection, nonlo cal effects take place that limit the possibility to accurately descri be injection probability data by means of a unique set of lucky carrie r model parameters.