Ys. Kim et al., NEW METHOD TO DETERMINE INTRINSIC AND EXTRINSIC BASE-COLLECTOR CAPACITANCES OF HBTS USING THE MILLER EFFECT, IEEE electron device letters, 16(10), 1995, pp. 445-447
A new method to determine intrinsic and extrinsic base-collector capac
itances of HBT's using the Miller effect is presented. The measured s-
parameters of an HBT are calibrated and transformed into the ABCD-para
meters. The fictitious input and output resistances are added to the H
BT and total ABCD-parameters are calculated. The added output resistan
ce degrades the frequency response of the overall network due to the M
iller effect, which is used to extract intrinsic and extrinsic base-co
llector capacitances. The advantage of this method is that it does not
require any special test structure.