C-60 FILMS FORMED BY IONIZED CLUSTER BEAM DEPOSITION - STRUCTURE AND DOPING BY ION-IMPLANTATION

Authors
SHI Y YU T LIU C LI SN GUO HX FAN XJ
Citation
Y. Shi et al., C-60 FILMS FORMED BY IONIZED CLUSTER BEAM DEPOSITION - STRUCTURE AND DOPING BY ION-IMPLANTATION, Fullerene science and technology, 3(5), 1995, pp. 469-478
Citations number
8
Categorie Soggetti
Chemistry Physical","Physics, Atomic, Molecular & Chemical","Material Science
Journal title
Fullerene science and technology → ACNP
ISSN journal
1064122X
Volume
3
Issue
5
Year of publication
1995
Pages
469 - 478
Database
ISI
SICI code
1064-122X(1995)3:5<469:CFFBIC>2.0.ZU;2-P
Abstract
C(6)0 films were formed on a variety of substrates by ionized cluster beam (ICB) technique. Their structure was found to depend on the accel eration voltages and substrate. Then the C(6)0 films were implanted by p(+)-ions with doses from 0-2X10(14) ion/cm(2). The in situ measureme nt of electrical conductivity revealed an abrupt decrease of three ord ers in resistance. The temperature coefficient of resistivity of the p (+)-ion implanted C(6)0 film remained in a negative value.