A NANOSECOND LIGHT DETECTOR

The device includes an FD 252-01 photodiode and a transimpedance ampli fier built using bipolar microwave transistors. Its operational charac teristics are as follows: the leading edge width is greater than or eq ual to 0.92 nsec, the upper frequency Limit is less than or equal to 3 80 MHz, the transfer impedance is 1-12.5 k Ohm, and the noise current in a band similar to 115 MHz wide is 21 nA. The feed voltage is 5 V, t he current draw is 14 mA, the maximum negative output voltage is great er than or equal to 1.4 V across a load of 50 Ohm and the dynamic rang e is approximate to 70 dB. There is only one correction chain in the c ircuit.