AN EXPERIMENTAL AND THEORETICAL-ANALYSIS OF THE TEMPERATURE PROFILE IN SEMICONDUCTOR-LASER DIODES USING THE PHOTODEFLECTION TECHNIQUE

The thermal response of a semiconductor laser diode is studied through two different methods based on the photothermal deflection technique. The full theoretical model is reviewed; the study of the temperature profile and hence the maximum mirror temperature rise, obtained for di fferent sizes of the device, allow one to expect thermally stable lase rs. The way to obtain, from the measurements, the thermal parameters o f the entire structure (diffusivity, conductivity) is also considered. The photothermal deflection equipment is described in detail for this application. The experimental results on three different kinds of las er diode are thoroughly discussed: double-heterostructure AlGaAs/GaAs, double-heterostructure InGaAsP/InP, and single-quantum-well (QW) stru cture AlGaAs/GaAs InGaAs QW.