INVESTIGATION OF THERMOELECTRIC-POWER OF GA2SE3 MONOCRYSTALS

Single crystals of Ga2Se3 were prepared by a technique based on the Br idgman method. Thermoelectric power was investigated in the temperatur e range 160-525 K. From this investigation many physical parameters su ch as effective masses of charge carriers, carrier mobilities, diffusi on length, diffusion coefficient, and the relaxation time for both maj ority and minority carriers were estimated. In conjunction with the el ectrical conductivity and the charge carrier concentration, the thermo electric power is discussed.