Cr. Cho et al., PRESSURE-DEPENDENCE OF C-V CURVE FOR FERROELECTRIC PBTIO3 THIN-FILMS PREPARED BY RF MULTITARGET MAGNETRON SPUTTERING, Crystal research and technology, 30(6), 1995, pp. 873-880
Lead titanate thin films were prepared in-situ by RF magnetron sputter
ing method in the substrate temperature region of 550 degrees C simila
r to 650 degrees C using Ti and Pb metal targets and oxygen gas. The f
ilms deposited at 650 degrees C for 60 min - when the applied power to
the Ti and Pb target and deposition pressure were 200 W, 40 W, and 1.
8 x 10(-2) Torr, respectively - had stoichiometric composition ratio a
nd shown X-ray diffraction patterns of tetragonal structure like that
of the powder. For the application to the piezoelectric field effect t
ransistor (PI-FET), the substrate of SiO2 (50 nm)/p-Si(100) was used.
Leakage current density of the thin film was 7 x 10(-8) A/cm(2) at 100
kV/cm, dielectric breakdown voltage was 1.8 MV/cm, and so it showed h
igh insulator characteristics. Capacitance-voltage curve was measured
as a function of pressure. The variation width of the capacitance was
6.5 pF at bias voltage of -4 volts, and the value increased linearly a
ccording to the pressure up to about 6 kgf/cm(2), and was saturated at
the pressure of 8 kgf/cm(2).