NUMERICAL-SIMULATION OF HIGH-POWER FILAMENT-FREE OPERATION FROM DOUBLE TAPERED SEMICONDUCTOR-LASER DIODES

Authors
JIANG ZP TSANG HK MCCALL MW
Citation
Zp. Jiang et al., NUMERICAL-SIMULATION OF HIGH-POWER FILAMENT-FREE OPERATION FROM DOUBLE TAPERED SEMICONDUCTOR-LASER DIODES, International journal of optoelectronics, 10(5), 1995, pp. 373-381
Citations number
23
Categorie Soggetti
Engineering, Eletrical & Electronic",Optics
Journal title
International journal of optoelectronics → ACNP
ISSN journal
09525432
Volume
10
Issue
5
Year of publication
1995
Pages
373 - 381
Database
ISI
SICI code
0952-5432(1995)10:5<373:NOHFOF>2.0.ZU;2-H
Abstract
The dynamical behaviour of a double tapered semiconductor laser diode has been studied numerically using a modified beam-propagation method. By examining the near and far-field mode evolution during gain-switch ed operation, we find that the optical power threshold for filament fo rmation in a double tapered device is significantly higher compared wi th standard broad area stripe devices. Optimization for filament-fi ee high power operation from double-tapered devices has also been carrie d out.