SI SIGE QUANTUM-WELL ELECTRON-MOBILITY - MAIN SCATTERING MECHANISMS/

Mobility calculations for a symmetrically strained Si/SiGe quantum wel l are reported considering conduction along the Si channel. The Boltzm ann transport theory is applied taking into account two scattering mec hanisms:electron scattering by acoustic phonons (via deformation-poten tial coupling) and electron scattering by ionized impurities (both rem ote and background). It is compared with experimental results reported by Schaffler et al., where the QW was grown avoiding threading disloc ations in the Si channel, and an excellent agreement is achieved. As i n our previous works only one adjustable parameter is introduced:the d eformation-potential energy.