QUANTUM-CONFINED STARK-EFFECT IN INGAAS GAAS QUANTUM-WELLS UNDER HIGHELECTRIC-FIELDS/

Citation
J. Kavaliauskas et al., QUANTUM-CONFINED STARK-EFFECT IN INGAAS GAAS QUANTUM-WELLS UNDER HIGHELECTRIC-FIELDS/, Physica status solidi. b, Basic research, 191(1), 1995, pp. 155-159
Citations number
15
Categorie Soggetti
Physics, Condensed Matter
ISSN journal
03701972
Volume
191
Issue
1
Year of publication
1995
Pages
155 - 159
Database
ISI
SICI code
0370-1972(1995)191:1<155:QSIIGQ>2.0.ZU;2-1
Abstract
Photocurrent and electroreflectance spectroscopies are combined to stu dy the transformation of the quantum confined Stark effect under high electric fields in shallow InGaAs/GaAs quantum wells. Experimental evi dences of exciton quenching and carrier tunneling out of the well are obtained. The coupling between quasibound and continuum states in the strong electric field region results in the increase of absorption bel ow the band gap of the barrier.