HOT-ELECTRON MAGNETOTRANSPORT IN NARROW-GAP SEMICONDUCTORS IN QUANTUMMAGNETIC-FIELD

Authors
Citation
Xm. Weng et Xl. Lei, HOT-ELECTRON MAGNETOTRANSPORT IN NARROW-GAP SEMICONDUCTORS IN QUANTUMMAGNETIC-FIELD, Physica status solidi. b, Basic research, 191(1), 1995, pp. 183-188
Citations number
16
Categorie Soggetti
Physics, Condensed Matter
ISSN journal
03701972
Volume
191
Issue
1
Year of publication
1995
Pages
183 - 188
Database
ISI
SICI code
0370-1972(1995)191:1<183:HMINSI>2.0.ZU;2-I
Abstract
The longitudinal magneto-transport in narrow-gap semiconductor InSb un der a quantum magnetic field at 42 K is investigated using the balance equation theory. The nonparabolicity of the energy band and scatterin gs due to ionized impurities, acoustic and polar optical phonons are t aken into account. All the subbands occupied by electrons are included in the calculation. The longitudinal magnetic field reduces the drift velocity and leads to a decrease of the electron temperature. The dri ft mobility decreases with increasing magnetic field. The drift veloci ty under the extreme-quantum-limit assumption is completely different from that taking into account all possible subbands occupied by electr ons.