LOW-VOLTAGE, HIGH-EFFICIENCY GAAS CLASS-E POWER-AMPLIFIERS FOR WIRELESS TRANSMITTERS

Authors
SOWLATI T SALAMA CAT SITCH J RABJOHN G SMITH D
Citation
T. Sowlati et al., LOW-VOLTAGE, HIGH-EFFICIENCY GAAS CLASS-E POWER-AMPLIFIERS FOR WIRELESS TRANSMITTERS, IEEE journal of solid-state circuits, 30(10), 1995, pp. 1074-1080
Citations number
19
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
IEEE journal of solid-state circuits → ACNP
ISSN journal
00189200
Volume
30
Issue
10
Year of publication
1995
Pages
1074 - 1080
Database
ISI
SICI code
0018-9200(1995)30:10<1074:LHGCPF>2.0.ZU;2-L
Abstract
In this paper, a Class E power amplifier for mobile communications is presented, The advantages of Class E over Class B, Class C, and Class F power amplifiers in a low voltage design are discussed, A fully inte grated Class E power amplifier module operating at 835 MHz is designed , fa bricated, and tested. The circuit is implemented in a self-aligne d-gate, depletion mode 0.8-mu m GaAs MESFET process, The amplifier del ivers 24 dBm of power to the 50-Omega load with a power added efficien cy greater than 50% at a supply voltage of 2.5 V. The power dissipated in the integrated matching networks is 1.5 times the power dissipated in the transistors.