0.78- AND 0.98-MU-M RIDGE-WAVE-GUIDE LASERS BURIED WITH ALGAAS CONFINEMENT LAYER SELECTIVELY GROWN BY CHLORIDE-ASSISTED MOCVD

The 0.78- and 0.98-mu m buried-ridge AlGaAs laser diodes (LD's) with a high Al-content AlGaAs confinement layer selectively grown by using a Cl-assisted MOCVD are demonstrated. By employing the AlGaAs confineme nt layer, the threshold current and the slope efficiency of the 0.78-m u m LD are improved by similar to 40%, compared to those of the conven tional loss-guided LD with the GaAs confinement layer, In addition, th e stable fundamental mode up to 150 mW and the small astigmatic distan ce less than 1 mu m are obtained. The 0.78-mu m LD also shows the exce llent high-power and high-temperature characteristic such as 100 mW CW operation at 100 degrees C and the reliable 2,000-hour operation unde r the condition of 60 degrees C and 55 mW, In the 0.98-mu m LD, the na rrow beam with the low aspect ratio of 1.86 and the stable fundamental transverse mode over 200 mW are exhibited, As a result, the 0.98-mu m LD realizes the high fiber-coupled-power of 148 mW, Moreover, the hig h-power and high-temperature operation of 150 mW at 90 degrees C is ob tained, In the preliminary aging test, the LD's have been stably opera ting for over 900 hours under the condition of 50 degrees C and 100 mW .