A STUDY OF THE TEMPERATURE SENSITIVITY OF GAAS-(AL,GA)AS MULTIPLE-QUANTUM-WELL GRINSCH LASERS

Authors
DION M LI ZM ROSS D CHATENOUD F WILLIAMS RL DICK S
Citation
M. Dion et al., A STUDY OF THE TEMPERATURE SENSITIVITY OF GAAS-(AL,GA)AS MULTIPLE-QUANTUM-WELL GRINSCH LASERS, IEEE journal of selected topics in quantum electronics, 1(2), 1995, pp. 230-233
Citations number
9
Categorie Soggetti
Engineering, Eletrical & Electronic",Optics
Journal title
IEEE journal of selected topics in quantum electronics → ACNP
ISSN journal
1077260X
Volume
1
Issue
2
Year of publication
1995
Pages
230 - 233
Database
ISI
SICI code
1077-260X(1995)1:2<230:ASOTTS>2.0.ZU;2-M
Abstract
We have measured the temperature sensitivity, T-0, of GaAs-(Al,Ga)As, GRINSCH, multiple quantum-well (MQW) lasers with different numbers of quantum wells ranging from one to ten. Our data suggests that there is an optimum number of wells, namely five, where T-0 is highest, Using a temperature-dependent model based on drift-diffusion equations, we h ave systematically analyzed the temperature sensitivity of a MQW GaAs- (Al,Ga)As laser, The T-0 versus well-number behavior observed experime ntally is verified, and the important temperature-dependent factors ar e identified.