0.98-MU-M INGAAS-INGAP STRAINED-QUANTUM-WELL LASERS WITH GAAS-INGAP SUPERLATTICE OPTICAL CONFINEMENT LAYER

We have proposed a GaAs-InGaP superlattice optical confinement layer ( SL-OCL), which replaces graded InGaAsP alloy layers in 0.98-mu m InGaA s-InGaP graded-index separate-confinement-heterostructure (GRINSCK) st rained quantum-well (QW) lasers. Theoretical study of the multiquantum barrier (MQB) effect of the GaAs-InGaP SL indicates that electrons in the GaAs OCL feel more than two times higher barrier height than the classical bulk barrier height. Actually, the increase of internal quan tum efficiency and the decrease of threshold current density were conf irmed, Furthermore, the extremely high characteristic temperature T-0 of 300 K around RT was obtained, These improvements of laser character istics, especially high T-0, is mainly owing to the enhancement of the carrier confinement due to the MQB effect of the SL-OCL.