SINGLE-MODE, PASSIVE ANTIGUIDE VERTICAL-CAVITY SURFACE-EMITTING LASER

We report the characteristics of a single-mode, low threshold, passive antiguide region (PAR) vertical cavity surface emitting laser (VCSEL) using both organometallic chemical vapor deposition (OMCVD) and molec ular beam epitaxy (MBE) for the regrowth of the PAR structure. The nov el passive antiguide region surrounding the active region is demonstra ted to be a highly effective transverse mode and polarization mode sel ection mechanism. A stable single fundamental mode at high currents ha s been achieved experimentally for laser aperture as large as 16 mu m diameter. In addition, very low threshold current of 0.8 mA and curren t density of 490 A/cm(2) are achieved with 8 and 32 mu m diameter VCSE L's, respectively. A detailed numerical two- and three-dimensional ana lysis was performed using the beam propagation method. The modal losse s were calculated as a function of the cladding refractive index and t he laser size. Quantitative results leading to approximate formulae ha ve been achieved. The high mode selectivity obtained from the numerica l analysis is in good agreement with the experimental results we have achieved.