DETERMINATION OF THE BAND-STRUCTURE OF DISORDERED ALGAINP AND ITS INFLUENCE ON VISIBLE-LASER CHARACTERISTICS

Citation
At. Meney et al., DETERMINATION OF THE BAND-STRUCTURE OF DISORDERED ALGAINP AND ITS INFLUENCE ON VISIBLE-LASER CHARACTERISTICS, IEEE journal of selected topics in quantum electronics, 1(2), 1995, pp. 697-706
Citations number
44
Categorie Soggetti
Engineering, Eletrical & Electronic",Optics
ISSN journal
1077260X
Volume
1
Issue
2
Year of publication
1995
Pages
697 - 706
Database
ISI
SICI code
1077-260X(1995)1:2<697:DOTBOD>2.0.ZU;2-R
Abstract
Using hydrostatic pressure techniques, we have obtained new energies f or the X-minina, L-minima and band offsets in GaInP-AlGaInP, Theoretic al calculations of the threshold current density in bulk and strained quantum-well visible lasers are shown to be in good agreement with exp erimental results, obtained as a function of both temperature and hydr ostatic pressure, Our results show that heterobarrier leakage current is a dominant limiting factor in the performance at shorter wavelength (similar to 635 mm) operation, but is of less significance for longer wavelength (similar to 675 mn) operation,