ENHANCED PHOTOLUMINESCENCE DETECTION OF OXYGEN IN SILICON CRYSTAL BY FORMATION OF A CARBON-OXYGEN COMPLEX THROUGH CARBON IMPLANTATION AND ELECTRON-IRRADIATION

Authors
NAKAMURA M BYRNE AS KITAMURA E SUZUKI T NAGAI S SUNAGA H AOKI Y NARAMOTO H
Citation
M. Nakamura et al., ENHANCED PHOTOLUMINESCENCE DETECTION OF OXYGEN IN SILICON CRYSTAL BY FORMATION OF A CARBON-OXYGEN COMPLEX THROUGH CARBON IMPLANTATION AND ELECTRON-IRRADIATION, Journal of applied physics, 78(7), 1995, pp. 4407-4410
Citations number
13
Categorie Soggetti
Physics, Applied
Journal title
Journal of applied physics → ACNP
ISSN journal
00218979
Volume
78
Issue
7
Year of publication
1995
Pages
4407 - 4410
Database
ISI
SICI code
0021-8979(1995)78:7<4407:EPDOOI>2.0.ZU;2-N
Abstract
In order to develop a method to detect low-level oxygen in thin silico n crystals by photoluminescence (PL), a radiative carbon-oxygen center (C center: 0.79 eV) is formed in silicon crystals through carbon intr oduction by ion implantation. The PL intensity of the C center of the implanted sample is significantly increased by annealing the sample at 1000 degrees C followed by electron irradiation. The possibility of d etecting a low concentration of oxygen (below 1 x 10(15) atoms/cm(3)) in a layer thinner than 1 mu m thick is seen. (C) 1995 American Instit ute of Physics.