CRYSTALLIZED AMORPHOUS DEPOSITS FOR RELAXED EPITAXY - CDTE(001) ON GAAS(001)

Authors
DHAR NK WOOD CEC
Citation
Nk. Dhar et Cec. Wood, CRYSTALLIZED AMORPHOUS DEPOSITS FOR RELAXED EPITAXY - CDTE(001) ON GAAS(001), Journal of applied physics, 78(7), 1995, pp. 4463-4466
Citations number
13
Categorie Soggetti
Physics, Applied
Journal title
Journal of applied physics → ACNP
ISSN journal
00218979
Volume
78
Issue
7
Year of publication
1995
Pages
4463 - 4466
Database
ISI
SICI code
0021-8979(1995)78:7<4463:CADFRE>2.0.ZU;2-I
Abstract
When annealed, thin amorphous deposits of highly lattice mismatched ma terials provide specular crystalline surfaces for epitaxy. Mismatch st rain is predominantly relieved by misfit dislocations propagating in t he plane of the interface, so that resulting films have low threading dislocation densities. We demonstrate the application of this concept to the growth of (001) oriented CdTe epitaxy on (001) GaAs. (C) 1995 A merican Institute of Physics.