Nk. Dhar et Cec. Wood, CRYSTALLIZED AMORPHOUS DEPOSITS FOR RELAXED EPITAXY - CDTE(001) ON GAAS(001), Journal of applied physics, 78(7), 1995, pp. 4463-4466
When annealed, thin amorphous deposits of highly lattice mismatched ma
terials provide specular crystalline surfaces for epitaxy. Mismatch st
rain is predominantly relieved by misfit dislocations propagating in t
he plane of the interface, so that resulting films have low threading
dislocation densities. We demonstrate the application of this concept
to the growth of (001) oriented CdTe epitaxy on (001) GaAs. (C) 1995 A
merican Institute of Physics.