DISPERSIVE TRANSPORT OF CARRIERS UNDER NONUNIFORM ELECTRIC-FIELD

We have presented in this paper a semi-numerical simulation of dispers ive transport under one-dimensional nonuniform electric field which co uld be used to study dispersive transport of carriers in the oxide. Ou r simulation is based on continuous time random walk principles (CTRW) . Previous formulations using CTRW were derived under the assumption o f uniform electric field. Comparison of our simulation results with th e equivalent uniform field case shows that the treatment of nonuniform electric field is necessary to correctly predict events linked to dis persive transport, such as the growth of trapped oxide charge due to h ole trapping or interface states due to H+ ions reaching oxide semicon ductor interface of metal-oxide-semiconductor devices. (C) 1995 Americ an Institute of Physics.