A SIMPLE-MODEL FOR DELTA-DOPED FIELD-EFFECT TRANSISTOR ELECTRONIC STATES

Citation
Lm. Gaggerosager et R. Perezalvarez, A SIMPLE-MODEL FOR DELTA-DOPED FIELD-EFFECT TRANSISTOR ELECTRONIC STATES, Journal of applied physics, 78(7), 1995, pp. 4566-4569
Citations number
21
Categorie Soggetti
Physics, Applied
Journal title
ISSN journal
00218979
Volume
78
Issue
7
Year of publication
1995
Pages
4566 - 4569
Database
ISI
SICI code
0021-8979(1995)78:7<4566:ASFDFT>2.0.ZU;2-7
Abstract
We propose a simple potential model which reproduces the main properti es of the electronic structure of a delta-doped field-effect transisto r. On the basis of selfconsistent calculations we conclude that the en ergies, wavefunctions and other characteristic properties obtained wit h the proposed model are very close to the results of full selfconsist ent calculations. (C) 1995 American Institute of Physics.