Lm. Gaggerosager et R. Perezalvarez, A SIMPLE-MODEL FOR DELTA-DOPED FIELD-EFFECT TRANSISTOR ELECTRONIC STATES, Journal of applied physics, 78(7), 1995, pp. 4566-4569
We propose a simple potential model which reproduces the main properti
es of the electronic structure of a delta-doped field-effect transisto
r. On the basis of selfconsistent calculations we conclude that the en
ergies, wavefunctions and other characteristic properties obtained wit
h the proposed model are very close to the results of full selfconsist
ent calculations. (C) 1995 American Institute of Physics.