DISSIPATIVE ELECTRON-TUNNELING FROM THE PHOSPHORUS GROUND-LEVEL TO THE CONDUCTION-BAND OF SILICON

Authors
DARGYS A ZURAUSKIENE N
Citation
A. Dargys et N. Zurauskiene, DISSIPATIVE ELECTRON-TUNNELING FROM THE PHOSPHORUS GROUND-LEVEL TO THE CONDUCTION-BAND OF SILICON, Journal of applied physics, 78(7), 1995, pp. 4802-4804
Citations number
11
Categorie Soggetti
Physics, Applied
Journal title
Journal of applied physics → ACNP
ISSN journal
00218979
Volume
78
Issue
7
Year of publication
1995
Pages
4802 - 4804
Database
ISI
SICI code
0021-8979(1995)78:7<4802:DEFTPG>2.0.ZU;2-9
Abstract
The influence of thermal acoustic vibrations on impurity field ionizat ion is investigated. At lattice temperatures T<15 K, when tunneling fr om the ground level predominates, thermal acoustic phonons in silicon are found to enhance phosphorus field ionization. The experiments are compared with recent theoretical calculations, which take into account the deformation potential interaction of thermal acoustic phonons wit h a localized center. (C) 1995 American Institute of Physics.