TRANSMISSION-LINE EQUIVALENT-CIRCUIT MODEL OF MINORITY-CARRIER TRANSIENT CURRENT IN QUASI-NEUTRAL SILICON LAYERS INCLUDING INDUCTIVE EFFECTS

A novel transmission-line model for the minority carrier transport thr ough quasi-neutral arbitrarily doped layers is proposed. Based on deta iled drift-diffusion equations, the novel TLEC includes the inductance that represents the influence of the relaxation-time term. Coupled wi th a object-orientated hybrid circuit simulator, the novel transmissio n-line model is implemented for the transient analysis of minority car rier transport. A substantial longer storage time of the minority carr ier transient current at the collector end of ultra-narrow base is pre dicted owing to inclusion of the relaxation-time term.