3-DIMENSIONAL SIMULATION FOR NEGATIVE-RESISTANCE CHARACTERISTICS OF PARASITIC BIPOLAR-TRANSISTOR IN A SMALL-SIZED MOSFET STRUCTURE

Authors
JU CP ZEMANIAN AH
Citation
Cp. Ju et Ah. Zemanian, 3-DIMENSIONAL SIMULATION FOR NEGATIVE-RESISTANCE CHARACTERISTICS OF PARASITIC BIPOLAR-TRANSISTOR IN A SMALL-SIZED MOSFET STRUCTURE, International journal of numerical modelling, 8(5), 1995, pp. 367-379
Citations number
18
Categorie Soggetti
Computer Application, Chemistry & Engineering","Mathematical Method, Physical Science","Engineering, Eletrical & Electronic
Journal title
International journal of numerical modelling → ACNP
ISSN journal
08943370
Volume
8
Issue
5
Year of publication
1995
Pages
367 - 379
Database
ISI
SICI code
0894-3370(1995)8:5<367:3SFNCO>2.0.ZU;2-2
Abstract
The behaviours of parasitic bipolar transistors are investigated by ex ploring the physical mechanisms of negative resistance characteristics generated in a small-sized MOSFET structure. Physical experiments and three-dimensional simulations verify the expected negative resistance characteristics. The effects of variations of device parameters such as injected substrate current levels, doping concentrations, channel w idths, and physical device sizes are investigated by simulation. Accor ding to simulation results, the operation of a parasitic bipolar trans istor is initiated by the injected substrate current; this explains th e negative resistance characteristics occurring at low operating volta ges.