Cp. Ju et Ah. Zemanian, 3-DIMENSIONAL SIMULATION FOR NEGATIVE-RESISTANCE CHARACTERISTICS OF PARASITIC BIPOLAR-TRANSISTOR IN A SMALL-SIZED MOSFET STRUCTURE, International journal of numerical modelling, 8(5), 1995, pp. 367-379
The behaviours of parasitic bipolar transistors are investigated by ex
ploring the physical mechanisms of negative resistance characteristics
generated in a small-sized MOSFET structure. Physical experiments and
three-dimensional simulations verify the expected negative resistance
characteristics. The effects of variations of device parameters such
as injected substrate current levels, doping concentrations, channel w
idths, and physical device sizes are investigated by simulation. Accor
ding to simulation results, the operation of a parasitic bipolar trans
istor is initiated by the injected substrate current; this explains th
e negative resistance characteristics occurring at low operating volta
ges.