This work presents and analyses the X-ray diffraction data for the sem
iconducting compound CuInSe2, synthesized by the vertical Bridgman met
hod. The (Cu/In) ratio was varied to produce a stoichiometric CuInSe2
ingot. Structure factors (F-hkl) equations for the (hkl) reflections,
which are available for the ternary chalcopyrite-structured semiconduc
tors, were deduced analytically and have been used to calculate the re
lative peak intensities for CuInSe2 diffraction planes. CuInSe2 thin f
ilms were also prepared by flash evaporation of a stoichiometric CuInS
e2 powder, onto different substrates. Structural characterization of t
hese films was carried out by X-ray diffraction and scanning electron
microscopy studies. The composition of the different samples has been
determined by energy dispersive spectrometry. The results obtained ind
icate the presence of the chalcopyrite phase and nearly stoichiometric
compositions.