LOW-PRESSURE CHEMICAL-VAPOR-DEPOSITION OF METALLIC-FILMS OF IRON, MANGANESE, COBALT, COPPER, GERMANIUM AND TIN EMPLOYING BIS(TRIMETHYL)SILYLAMIDO COMPLEXES, M(N(SIME(3))(2))(N)
Dv. Baxter et al., LOW-PRESSURE CHEMICAL-VAPOR-DEPOSITION OF METALLIC-FILMS OF IRON, MANGANESE, COBALT, COPPER, GERMANIUM AND TIN EMPLOYING BIS(TRIMETHYL)SILYLAMIDO COMPLEXES, M(N(SIME(3))(2))(N), CHEMICAL VAPOR DEPOSITION, 1(2), 1995, pp. 49
The deposition of metallic films by chemical vapor deposition, in cont
rast to the use of physical methods such as evaporation or sputtering,
offers the potential advantage of conformal coverage and substrate se
lectivity in microelectronics applications, Here, the title compounds
have been used to deposit high-purity metal films and can be seen as s
ubstrate-selective precursors.