THE DEPOSITION OF ALUMINUM THIN-FILMS BY CVD USING A NOVEL ADDUCT OF DIMETHYLALUMINUM HYDRIDE

Authors
JONES AC HOULTON D RUSHWORTH SA FLANGAN JA BROWN JR CRITCHLOW GW
Citation
Ac. Jones et al., THE DEPOSITION OF ALUMINUM THIN-FILMS BY CVD USING A NOVEL ADDUCT OF DIMETHYLALUMINUM HYDRIDE, CHEMICAL VAPOR DEPOSITION, 1(1), 1995, pp. 24
Citations number
22
Categorie Soggetti
Materials Science, Coatings & Films","Materials Sciences, Composites",Electrochemistry,"Physics, Condensed Matter
Journal title
CHEMICAL VAPOR DEPOSITION → ACNP
ISSN journal
09481907
Volume
1
Issue
1
Year of publication
1995
Database
ISI
SICI code
0948-1907(1995)1:1<24:TDOATB>2.0.ZU;2-V
Abstract
Communication: Thin films of aluminum have an important application in the metallization of silicon devices in very large scale integration technology. In this communication a new precursor, NMe(2)AlH(Nme(2)Et) , has been used for the CVD of high purity aluminum in the temperature range 250-350 degrees C. In contrast to currently available precursor s it is a free flowing and non-pyrophoric liquid, making it less hazar dous and more convenient for use in CVD.