THE DEPOSITION OF PLATINUM-CONTAINING TIN OXIDE THIN-FILMS BY METAL-ORGANIC CVD

Communication: The metal oxide semiconductor SnO2 has a range of impor tant applications, such as in transparent and conducting coatings on g lass, and in gas-sensing devices. CVD has a number of advantages as th e technique of choice for the deposition of SnO2 thin films but develo pment has in the past been hampered by the high toxicity of the availa ble precursors and the necessity of adding an oxidant such as O-2 or H 2O. Here, SnO2 deposition from the relatively non-toxic tetra-t-butoxi de tin in the absence of added oxidant is reported. Platinum doping of the material is also discussed.