TRANSPORT IN ATOMICALLY ENGINEERED BISRCACUO MULTILAYERS

Citation
I. Bozovic et Jn. Eckstein, TRANSPORT IN ATOMICALLY ENGINEERED BISRCACUO MULTILAYERS, Journal of superconductivity, 8(5), 1995, pp. 537-540
Citations number
13
Categorie Soggetti
Physics, Applied","Physics, Condensed Matter
ISSN journal
08961107
Volume
8
Issue
5
Year of publication
1995
Pages
537 - 540
Database
ISI
SICI code
0896-1107(1995)8:5<537:TIAEBM>2.0.ZU;2-7
Abstract
We have utilized atomic layer deposition to synthesize single crystal thin films of cuprate superconductors, as well as a variety of superla ttices and multilayer heterostructures with atomically abrupt interfac es. For example, we made trilayer structures with the top and the bott om BiSrCaCuO electrodes separated by titanate barriers that were only 4 Angstrom thick and yet free of pinholes over macroscopic areas. This unique synthetic capability made it possible to study transport in th e c-axis direction under controlled and systematically varied conditio ns. Taken together, these experiments provide a picture of the c-axis transport in 2201, 2212, and various heterostructures under study. In particular, they suggest presence of a large density of localized stat es near the Fermi level and thus support a two-component description o f the electron system in these compounds.