DETERMINATION OF THE CONDUCTION-BAND ELECTRON EFFECTIVE-MASS IN HEXAGONAL GAN

Authors
DRECHSLER M HOFMANN DM MEYER BK DETCHPROHM T AMANO H AKASAKI I
Citation
M. Drechsler et al., DETERMINATION OF THE CONDUCTION-BAND ELECTRON EFFECTIVE-MASS IN HEXAGONAL GAN, JPN J A P 2, 34(9B), 1995, pp. 1178-1179
Citations number
11
Categorie Soggetti
Physics, Applied
Journal title
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS → ACNP
Volume
34
Issue
9B
Year of publication
1995
Pages
1178 - 1179
Database
ISI
SICI code
Abstract
The electron effective mass in hexagonal GaN films grown by metal orga nic vapor phase epitaxy on sapphire substrates is determined by cyclot ron resonance experiments. Its value is m(p) = 0.22 +/- 0.005 m(o). T aking polaron effects into account the band edge mass is m(b) = 0.20 +/- 0.005 m(o). From the resonance linewidth a mobility of 3500 cm(2)/ V . s at 6 K is obtained.