IMPROVEMENT IN JUNCTION PROPERTIES OF A N-SI POLY(3-METHYLTHIOPHENE) RETEROJUNCTION BY POSTTREATMENT WITH AQHF/

Junction properties of an n-Si/poly(3-methylthiophene) (P3MeT) cell ar e investigated by current-voltage measurements. Efforts have been made to understand and improve the inorganic/organic interface. It was fou nd that a great improvement in junction properties is possible by trea ting the cell with an aq. HF solution. Since electrical conductivity o f P3MeT bulk is little affected by the HF treatment, the improvement i s attributed to the enhancement in interactions between P3MeT and n-Si . The cell showed degradation upon exposure to air, but it recovered i ts original characteristics when it was again treated with an aq.HF so lution.