MAGNETORESISTANCE AND DE HAAS-VAN-ALPHEN EFFECT IN YBGA2

Authors
SUGAWARA H MOTOKI K YAMAZAKI T EBIHARA T KIMURA N TAKASHITA M ITOH J TOSHIMA H SETTAI R ONUKI Y
Citation
H. Sugawara et al., MAGNETORESISTANCE AND DE HAAS-VAN-ALPHEN EFFECT IN YBGA2, Journal of the Physical Society of Japan, 64(9), 1995, pp. 3360-3364
Citations number
4
Categorie Soggetti
Physics
Journal title
Journal of the Physical Society of Japan → ACNP
ISSN journal
00319015
Volume
64
Issue
9
Year of publication
1995
Pages
3360 - 3364
Database
ISI
SICI code
0031-9015(1995)64:9<3360:MADHEI>2.0.ZU;2-L
Abstract
We have succeeded in growing a high-quality single crystal of YbGa2, a nd have done the magnetoresistance and the de Haas-van Alphen experime nts. YbGa2 is a semimetal and Fermi surfaces consist of the closed ele ctron and hole ones. Their cyclotron masses are in the range of 0.2 to 0.9 m(0).