MAGNETORESISTANCE AND DE HAAS-VAN-ALPHEN EFFECT IN YRU2SI2

Citation
H. Ikezawa et al., MAGNETORESISTANCE AND DE HAAS-VAN-ALPHEN EFFECT IN YRU2SI2, Journal of the Physical Society of Japan, 64(9), 1995, pp. 3422-3428
Citations number
8
Categorie Soggetti
Physics
ISSN journal
00319015
Volume
64
Issue
9
Year of publication
1995
Pages
3422 - 3428
Database
ISI
SICI code
0031-9015(1995)64:9<3422:MADHEI>2.0.ZU;2-U
Abstract
We have measured the magnetoresistance and the de Haas-van Alphen effe ct of YRu2Si2. The Fermi surface and cyclotron mass of YRu2Si2 are com pared to those of LaRu2Si2 and LaRu2Ge2. Main hole Fermi surfaces of t he three compounds are similar and ellipsoidal in shape, which occupy about half of the Brillouin zone. The small hole Fermi surface with a shape of rugby ball is one in number for YRu2Si2, while three for LaRu 2Si2 and LaRu2Ge2. A cylindrical Fermi surface and a multiply-connecte d Fermi surface exist for YRu2Si2, while there exists a doughnut like electron Fermi surface for LaRu2Si2 and LaRu2Ge2. The cyclotron masses of YRu2Si2 are about 50% and 10% larger than those of LaRu2Si2 and La Ru2Ge2, respectively.