REACTIVE MAGNETRON CO-SPUTTERED ANTIFERROELECTRIC LEAD ZIRCONATE THIN-FILMS

Antiferroelectric lead zirconate thin films were formed on platinum co ated silicon substrates by a reactive magnetron co-sputtering method. The films showed (240) preferred orientation. The crystallization temp eratures and the preferred orientation were affected by the lead conte nt in the films. The electric field forced transformation from the ant iferroelectric phase to the ferroelectric phase was observed at room t emperature with a maximum polarization value of 36 mu C/cm(2). The ave rage field to excite the ferroelectric state and that for the reversio n to the antiferroelectric state were 267 and 104 kV/cm respectively. (C) 1995 American Institute of Physics.