PHOSPHORUS DIFFUSION EFFECT ON DEFECT STRUCTURE OF SILICON WITH OXYGEN PRECIPITATES REVEALED BY GOLD DIFFUSION STUDY

Gold diffusion was used to understand the influence of phosphorus diff usion on defect structure of two step annealed Czochralski silicon waf ers which contain oxygen related precipitates. Thanks to deep level tr ansient spectroscopy measurements and use of relations already publish ed, it was found that substitutional gold concentration is independent of oxygen precipitation, while phosphorus diffusion, by means of the injection of self-interstitials in the bulk, shrinks the oxygen precip itates and increases substitutional gold concentration approximately t o the solubility limit. (C) 1995 American Institute of Physics.