LOW-RESISTANCE OHMIC CONDUCTION ACROSS COMPOUND SEMICONDUCTOR WAFER-BENDED INTERFACES

Data are presented demonstrating low-resistance Ohmic conduction acros s interfaces formed by high-temperature (750-1000 degrees C) compound semiconductor wafer bonding. Unipolar junctions formed by wafer bondin g surfaces consisting of In0.5Ga0.5P/In0.5Ga0.5P, GaP/GaP, GaP/In0.5Ga 0.5P, and In0.5Ga0.5P/GaAs are shown to exhibit low-resistance Ohmic c onduction for both p- and n-isotype junctions. The achievement: of the se properties is demonstrated to be critically dependent upon the crys tallo,graphic alignment of the bonded wafer surfaces, irrespective of the lattice mismatch between the surfaces. Specifically, we show that the surface orientation of the bonded surfaces must be nominally match ed while simultaneously maintaining rotational alignment of the wafers . (C) 1995 American Institute of Physics.