PULSED EXCIMER-LASER DEPOSITION OF SI1-XGEX THIN-FILMS

The ability to grow Si1-xGex thin films on single-crystal silicon or f used silica substates by the pulsed excimer laser ablation from a sint ered SiGe target is investigated. The stoichiometry of the deposits wa s found to depend essentially on the Ge enrichment of the ablated targ et surface. Crystalline layers were obtained for substrate temperature s higher than a threshold value depending on its nature. Finally, surf aces, nearly free from droplets, were achieved by optimizing the laser irradiation conditions. (C) 1995 American Institute of Physics.