MAGNETIC-PROPERTIES OF RADIO-FREQUENCY SPUTTERED THIN-FILMS OF LA-PB-MN OXIDES

We report the synthesis by radio frequency sputtering and characteriza tion of thin films of La0.74Pb0.26MnOz on Si, the substrate of choice for device integration. Textured films with (110) orientation were gro wn on (100) Si and the films are ferromagnetic below 325 K. Resistivit y rho data show a metal-to-semiconductor transition at T-ms=250 K. The ferromagnetic resonance linewidth shows a discontinuity at T-ms. Data on magnetoresistance MR=[rho(0)-rho(H)]/rho(0) versus temperature ind icate a maximum value of 22% at T-ms for a static magnetic field of 2 T and MR values of 15%-22% are observed over the entire temperature ra nge 5-300 K. (C) 1995 American Institute of Physics.