DESIGN OF ACTIVE SWITCHES USING AN INXGA1-XASYP1-Y INP HETEROSTRUCTURE/

The results of a novel analysis of active twin-ridge-waveguide coupler switches in InxGa1-xAsyP1-y/InP are reported. A travelling-wave model is adopted and the switching performance of both the cross and the ba r state is investigated by means of the beam propagation method (BPM) based on the method of lines. Our results have been validated through the BPM based on the fast Fourier transformed and on the finite-differ ence scheme. A port-independent cross and bar state with high gain and low cross-talk have been demonstrated by choosing a foul-electrode co nfiguration. As art example, for a device length L = 1100 mu m and a b ar-state configuration we have found a cross-talk CT = -17.1 dB(CT = - 7.6 dB) and gain G = 9.4 dB (G = 9.5 dB) for the electromagnetic field launched in the waveguide with an electrode with lower (higher) injec ted curret.