RESISTIVITY OSCILLATION OF TI FILM DURING GROWTH

Very thin Ti films have resistivities with film-thickness-dependent os cillatory characteristics. Experimental results show that with H-2, CO 2 and O-2 gas adsorption on the film surface, the film structure and f ilm components have little influence on the resistivity oscillation. F urthermore, the oscillation amplitudes are sensitive to the surface fl atness. The resistivity oscillation is considered to occur by a modula tion of the electron transmission, in the matching of two electron wav e-functions at the interface of film/substrate and vacuum/film.