TEMPERATURE-DEPENDENCE OF ZNS GROWTH WITH ATMOSPHERIC-PRESSURE METALORGANIC VAPOR-PHASE EPITAXY USING DITERTIARYBUTYL SULFIDE

Quadrupole mass spectrometric study of the decomposition of ditertiary butyl sulfide (DtBS) showed that DtBS decomposes at low temperatures a bove 300 degrees C. The growth of ZnS with metalorganic vapor phase ep itaxy (MOVPE) using diethylzinc (DEZn) and DtBS showed the growth rate of more than 1 mu m/h at similar to 300 degrees C with moderate flow rates of the precursors. These studies demonstrate the superiority of DtBS for low-temperature growth of S-containing II-VI semiconductors. However, the decrease of the growth rate was observed at higher temper atures under the growth condition limited by DtBS supply. We examined the reason for this phenomenon and attributed it mainly to the decreas e of the transport efficiency of DtBS to the growing surface due to th ermal cracking of DtBS during transport, which was caused by the exces sive difference between the growth temperature and the decomposition t emperature of the precursor.